NGTB25N120S IGBT Transistor

The NGTB25N120S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB25N120S transistor as follows.

NGTB25N120S Transistor Specification

Transistor Code		NGTB25N120S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	192W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		151
Rise Time		74

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