NGTB15N60S1 IGBT Transistor

The NGTB15N60S1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB15N60S1 transistor as follows.

NGTB15N60S1 Transistor Specification

Transistor Code		NGTB15N60S1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	117W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		70
Rise Time		28

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