NGD8205N IGBT Transistor

The NGD8205N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD8205N transistor as follows.

NGD8205N Transistor Specification

Transistor Code		NGD8205N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK-4
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector-Emitter Saturation Voltage	VCE(on)	1.3V
Collector Current (Maximum)	IC	20A

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