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NGD8201A IGBT Transistor

The NGD8201A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD8201A transistor as follows.

Circuit diagram symbol of the NGD8201A transistor

NGD8201A Transistor Specification

Transistor Code NGD8201A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package DPAK-4
Collector Power Dissipation (Maximum) Pc 125W
Collector-Emitter Voltage (Maximum) VCE 400V
Collector-Emitter Saturation Voltage VCE(on) 1.3V
Collector Current (Maximum) IC 20A

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