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NGD18N40A IGBT Transistor

The NGD18N40A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD18N40A transistor as follows.

Circuit diagram symbol of the NGD18N40A transistor

NGD18N40A Transistor Specification

Transistor Code NGD18N40A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252
Collector Power Dissipation (Maximum) Pc 115W
Collector-Emitter Voltage (Maximum) VCE 430V
Gate-Emitter Voltage (Maximum) VGE 18V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 75
Rise Time 4500

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