NGD18N40A IGBT Transistor

The NGD18N40A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD18N40A transistor as follows.

NGD18N40A Transistor Specification

Transistor Code		NGD18N40A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	115W
Collector-Emitter Voltage (Maximum)	VCE	430V
Gate-Emitter Voltage (Maximum)	VGE	18V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		75
Rise Time		4500

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