NGB8245 IGBT Transistor

The NGB8245 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGB8245 transistor as follows.

NGB8245 Transistor Specification

Transistor Code		NGB8245
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	15V
Collector-Emitter Saturation Voltage	VCE(on)	1.24V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		65
Rise Time		3400

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