NGB8207AB IGBT Transistor

The NGB8207AB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGB8207AB transistor as follows.

NGB8207AB Transistor Specification

Transistor Code		NGB8207AB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	165W
Collector-Emitter Voltage (Maximum)	VCE	365V
Gate-Emitter Voltage (Maximum)	VGE	15V
Collector-Emitter Saturation Voltage	VCE(on)	1.75V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		90
Rise Time		1800

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