NGB8206A IGBT Transistor

The NGB8206A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGB8206A transistor as follows.

NGB8206A Transistor Specification

Transistor Code		NGB8206A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK-3
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector-Emitter Saturation Voltage	VCE(on)	1.3V
Collector Current (Maximum)	IC	20A

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