NGB8202N IGBT Transistor

The NGB8202N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGB8202N transistor as follows.

NGB8202N Transistor Specification

Transistor Code		NGB8202N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK-3
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector-Emitter Saturation Voltage	VCE(on)	1.3V
Collector Current (Maximum)	IC	20A

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