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Home » Electronics » IGBT » MWI50-12T7T Transistor

MWI50-12T7T IGBT Transistor

The MWI50-12T7T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MWI50-12T7T transistor as follows.

Circuit diagram symbol of the MWI50-12T7T transistor

MWI50-12T7T Transistor Specification

Transistor Code MWI50-12T7T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 80A

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