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Home » Electronics » IGBT » MWI50-12E6K Transistor

MWI50-12E6K IGBT Transistor

The MWI50-12E6K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MWI50-12E6K transistor as follows.

Circuit diagram symbol of the MWI50-12E6K transistor

MWI50-12E6K Transistor Specification

Transistor Code MWI50-12E6K
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.9V
Collector Current (Maximum) IC 51A

UXPython is not the creator or an official representative of the MWI50-12E6K IGBT transistor. You can download the official MWI50-12E6K IGBT transistor datasheet to get more infromation about this transistor.

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