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Home » Electronics » IGBT » MWI450-12E9 Transistor

MWI450-12E9 IGBT Transistor

The MWI450-12E9 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MWI450-12E9 transistor as follows.

Circuit diagram symbol of the MWI450-12E9 transistor

MWI450-12E9 Transistor Specification

Transistor Code MWI450-12E9
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 640A

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