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Home » Electronics » IGBT » MWI100-12T8T Transistor

MWI100-12T8T IGBT Transistor

The MWI100-12T8T is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MWI100-12T8T transistor as follows.

Circuit diagram symbol of the MWI100-12T8T transistor

MWI100-12T8T Transistor Specification

Transistor Code MWI100-12T8T
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package APPLICATION
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 145A

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