MWI100-12E8 IGBT Transistor

The MWI100-12E8 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MWI100-12E8 transistor as follows.

MWI100-12E8 Transistor Specification

Transistor Code		MWI100-12E8
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		APPLICATION
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	165A

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