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Home » Electronics » IGBT » MUBW50-12E8 Transistor

MUBW50-12E8 IGBT Transistor

The MUBW50-12E8 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MUBW50-12E8 transistor as follows.

Circuit diagram symbol of the MUBW50-12E8 transistor

MUBW50-12E8 Transistor Specification

Transistor Code MUBW50-12E8
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package E3
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 90A

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