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Home » Electronics » IGBT » MUBW10-06A7 Transistor

MUBW10-06A7 IGBT Transistor

The MUBW10-06A7 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MUBW10-06A7 transistor as follows.

Circuit diagram symbol of the MUBW10-06A7 transistor

MUBW10-06A7 Transistor Specification

Transistor Code MUBW10-06A7
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package E2
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 20A

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