MSAHX75L60D IGBT Transistor

The MSAHX75L60D is a P-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MSAHX75L60D transistor as follows.

MSAHX75L60D Transistor Specification

Transistor Code		MSAHX75L60D
Transistor Type		IGBT
IGBT Control Channel Type		P-Channel
Package		SMD-P
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		4000pF
Rise Time		50

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