MSAHX60F60B IGBT Transistor

The MSAHX60F60B is a P-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MSAHX60F60B transistor as follows.

MSAHX60F60B Transistor Specification

Transistor Code		MSAHX60F60B
Transistor Type		IGBT
IGBT Control Channel Type		P-Channel
Package		SMD-P
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2500pF
Rise Time		25

UXPython is not the creator or an official representative of the MSAHX60F60B IGBT transistor. You can download the official MSAHX60F60B IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel IGBT

MSAGX60F60B IGBT Transistor MSAHZ52F120B IGBT Transistor MSAHX75L60D IGBT Transistor MSAGX75F60B IGBT Transistor HGTD8P50G1 IGBT Transistor PPNGZ52F120B IGBT Transistor TA49015 IGBT Transistor MSAGZ52F120B IGBT Transistor G8P50G IGBT Transistor HGTD8P50G1S9A IGBT Transistor PPNHZ52F120B IGBT Transistor HGTD8P50G1S IGBT Transistor