MPMD150B120RH IGBT Transistor

The MPMD150B120RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MPMD150B120RH transistor as follows.

MPMD150B120RH Transistor Specification

Transistor Code		MPMD150B120RH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM3
Collector Power Dissipation (Maximum)	Pc	833W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		740
Rise Time		70

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