The MPMD100B120RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the MPMD100B120RH transistor as follows.
Transistor Code | MPMD100B120RH | |
---|---|---|
Transistor Type | IGBT | |
IGBT Control Channel Type | N-Channel | |
Package | 7DM3 | |
Collector Power Dissipation (Maximum) | Pc | 780W |
Collector-Emitter Voltage (Maximum) | VCE | 1200V |
Gate-Emitter Voltage (Maximum) | VGE | 20V |
Collector-Emitter Saturation Voltage | VCE(on) | 2.7V |
Collector Current (Maximum) | IC | 150A |
Operating Junction Temperature (Maximum) | 150 oC | |
Collector Capacitance | 518 | |
Rise Time | 60 |
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