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MPMC200B120RH IGBT Transistor

The MPMC200B120RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MPMC200B120RH transistor as follows.

Circuit diagram symbol of the MPMC200B120RH transistor

MPMC200B120RH Transistor Specification

Transistor Code MPMC200B120RH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 7DM2
Collector Power Dissipation (Maximum) Pc 960W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 275A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 977
Rise Time 90

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