MPMB50B120RH IGBT Transistor

The MPMB50B120RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MPMB50B120RH transistor as follows.

MPMB50B120RH Transistor Specification

Transistor Code		MPMB50B120RH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM1
Collector Power Dissipation (Maximum)	Pc	416W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		370
Rise Time		85

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