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MPMB100B120RH IGBT Transistor

The MPMB100B120RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MPMB100B120RH transistor as follows.

Circuit diagram symbol of the MPMB100B120RH transistor

MPMB100B120RH Transistor Specification

Transistor Code MPMB100B120RH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 7DM-1
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.7V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 518
Rise Time 55

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