MMIX4B22N300 IGBT Transistor

The MMIX4B22N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX4B22N300 transistor as follows.

MMIX4B22N300 Transistor Specification

Transistor Code		MMIX4B22N300
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	38A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		85
Rise Time		360

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