MMIX4B12N300 IGBT Transistor

The MMIX4B12N300 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX4B12N300 transistor as follows.

MMIX4B12N300 Transistor Specification

Transistor Code		MMIX4B12N300
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SMPD
Collector Power Dissipation (Maximum)	Pc	125W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	26A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		56
Rise Time		140

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