MMIX2S50N60B4D1 IGBT Transistor

The MMIX2S50N60B4D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX2S50N60B4D1 transistor as follows.

MMIX2S50N60B4D1 Transistor Specification

Transistor Code		MMIX2S50N60B4D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector Power Dissipation (Maximum)	Pc	110W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		176
Rise Time		55

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