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MMIX1Y82N120C3H1 IGBT Transistor

The MMIX1Y82N120C3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX1Y82N120C3H1 transistor as follows.

Circuit diagram symbol of the MMIX1Y82N120C3H1 transistor

MMIX1Y82N120C3H1 Transistor Specification

Transistor Code MMIX1Y82N120C3H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector Power Dissipation (Maximum) Pc 320W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.4V
Collector Current (Maximum) IC 78A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 285
Rise Time 78

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