MMIX1X340N65B4 IGBT Transistor

The MMIX1X340N65B4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX1X340N65B4 transistor as follows.

MMIX1X340N65B4 Transistor Specification

Transistor Code		MMIX1X340N65B4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector Power Dissipation (Maximum)	Pc	1200W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	450A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		670
Rise Time		76

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