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MMIX1X100N60B3H1 IGBT Transistor

The MMIX1X100N60B3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX1X100N60B3H1 transistor as follows.

Circuit diagram symbol of the MMIX1X100N60B3H1 transistor

MMIX1X100N60B3H1 Transistor Specification

Transistor Code MMIX1X100N60B3H1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SMPD
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 105A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 475
Rise Time 70

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