MMIX1B15N300C IGBT Transistor

The MMIX1B15N300C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX1B15N300C transistor as follows.

MMIX1B15N300C Transistor Specification

Transistor Code		MMIX1B15N300C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	3000V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	6V
Collector Current (Maximum)	IC	37A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		260
Rise Time		23

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