MMG800K120U6HN IGBT Transistor

The MMG800K120U6HN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG800K120U6HN transistor as follows.

MMG800K120U6HN Transistor Specification

Transistor Code		MMG800K120U6HN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	3300W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	800A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		120

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