MMG75S060B6N IGBT Transistor

The MMG75S060B6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG75S060B6N transistor as follows.

MMG75S060B6N Transistor Specification

Transistor Code		MMG75S060B6N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	330W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		60

UXPython is not the creator or an official representative of the MMG75S060B6N IGBT transistor. You can download the official MMG75S060B6N IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

SKM400GB062D IGBT Transistor SKM145GAL174DN IGBT Transistor APTGF180DH60 IGBT Transistor SHD724401 IGBT Transistor F4-50R12KS4 IGBT Transistor SGU1N60XFD IGBT Transistor AUIRGU4045D IGBT Transistor 2PG006(DG402RP) IGBT Transistor AUIRGP66524D0 IGBT Transistor BT30N60ANF IGBT Transistor IRG4MC30F IGBT Transistor RGT50TS65D IGBT Transistor MIO1200-33E10 IGBT Transistor SGW50N60HS IGBT Transistor APTGF180H60 IGBT Transistor TSG40N120CE IGBT Transistor SKM150GB125D IGBT Transistor IGC189T120T8RL IGBT Transistor APT8GT60KR IGBT Transistor MWI60-12T6K IGBT Transistor