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MMG75S060B6EN IGBT Transistor

The MMG75S060B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG75S060B6EN transistor as follows.

Circuit diagram symbol of the MMG75S060B6EN transistor

MMG75S060B6EN Transistor Specification

Transistor Code MMG75S060B6EN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 20

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