The MMG75S060B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the MMG75S060B6EN transistor as follows.
| Transistor Code | MMG75S060B6EN | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | MODULE | |
| Collector Power Dissipation (Maximum) | Pc | 250W |
| Collector-Emitter Voltage (Maximum) | VCE | 600V |
| Gate-Emitter Voltage (Maximum) | VGE | 20V |
| Collector-Emitter Saturation Voltage | VCE(on) | 1.8V |
| Collector Current (Maximum) | IC | 75A |
| Operating Junction Temperature (Maximum) | 175 oC | |
| Rise Time | 20 | |
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