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MMG75J120UZ IGBT Transistor

The MMG75J120UZ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG75J120UZ transistor as follows.

Circuit diagram symbol of the MMG75J120UZ transistor

MMG75J120UZ Transistor Specification

Transistor Code MMG75J120UZ
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 400
Rise Time 65

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