MMG75HB120H6UN IGBT Transistor

The MMG75HB120H6UN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG75HB120H6UN transistor as follows.

MMG75HB120H6UN Transistor Specification

Transistor Code		MMG75HB120H6UN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	480W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		50

UXPython is not the creator or an official representative of the MMG75HB120H6UN IGBT transistor. You can download the official MMG75HB120H6UN IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXYH75N65C3 IGBT Transistor NGTB30N120LWG IGBT Transistor APT30GT60BRDLG IGBT Transistor IGC142T120T6RL IGBT Transistor APT75GT120JU3 IGBT Transistor SG12N06DP IGBT Transistor SGW15N60 IGBT Transistor STGF19NC60WD IGBT Transistor IXGH28N30B IGBT Transistor NGTG15N60S1 IGBT Transistor MWI35-12A7 IGBT Transistor IXGH31N60D1 IGBT Transistor RJP6085DPN-00 IGBT Transistor TIG110BF IGBT Transistor STGW30NC120HD IGBT Transistor HGTG12N60A4 IGBT Transistor SGS6N60UF IGBT Transistor IGB01N120H2 IGBT Transistor NTE3311 IGBT Transistor GT10G131 IGBT Transistor