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MMG600KR120U IGBT Transistor

The MMG600KR120U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG600KR120U transistor as follows.

Circuit diagram symbol of the MMG600KR120U transistor

MMG600KR120U Transistor Specification

Transistor Code MMG600KR120U
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 3125W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 600A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 2820
Rise Time 60

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