MMG600K170U6EN IGBT Transistor

The MMG600K170U6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG600K170U6EN transistor as follows.

MMG600K170U6EN Transistor Specification

Transistor Code		MMG600K170U6EN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	3480W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	800A
Operating Junction Temperature (Maximum)		100 oC

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