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MMG50H120H6HN IGBT Transistor

The MMG50H120H6HN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG50H120H6HN transistor as follows.

Circuit diagram symbol of the MMG50H120H6HN transistor

MMG50H120H6HN Transistor Specification

Transistor Code MMG50H120H6HN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 300W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 40

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