MMG200S060B6N IGBT Transistor

The MMG200S060B6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG200S060B6N transistor as follows.

MMG200S060B6N Transistor Specification

Transistor Code		MMG200S060B6N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	735W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		900
Rise Time		43

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