The MMG200HB060H6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the MMG200HB060H6EN transistor as follows.
Transistor Code | MMG200HB060H6EN | |
---|---|---|
Transistor Type | IGBT | |
IGBT Control Channel Type | N-Channel | |
Package | MODULE | |
Collector Power Dissipation (Maximum) | Pc | 680W |
Collector-Emitter Voltage (Maximum) | VCE | 600V |
Gate-Emitter Voltage (Maximum) | VGE | 20V |
Collector-Emitter Saturation Voltage | VCE(on) | 1.45V |
Collector Current (Maximum) | IC | 200A |
Operating Junction Temperature (Maximum) | 175 oC | |
Rise Time | 50 |
UXPython is not the creator or an official representative of the MMG200HB060H6EN IGBT transistor. You can download the official MMG200HB060H6EN IGBT transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.