MMG200DR120DE IGBT Transistor

The MMG200DR120DE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG200DR120DE transistor as follows.

MMG200DR120DE Transistor Specification

Transistor Code		MMG200DR120DE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1400W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1040
Rise Time		60

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