MMG200D170B6EN IGBT Transistor

The MMG200D170B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG200D170B6EN transistor as follows.

MMG200D170B6EN Transistor Specification

Transistor Code		MMG200D170B6EN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1250W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		80

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