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MMG150DR120UK IGBT Transistor

The MMG150DR120UK is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG150DR120UK transistor as follows.

Circuit diagram symbol of the MMG150DR120UK transistor

MMG150DR120UK Transistor Specification

Transistor Code MMG150DR120UK
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1100W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 800
Rise Time 65

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