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MMG100SR060DE IGBT Transistor

The MMG100SR060DE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100SR060DE transistor as follows.

Circuit diagram symbol of the MMG100SR060DE transistor

MMG100SR060DE Transistor Specification

Transistor Code MMG100SR060DE
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 520
Rise Time 45

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