MMG100S170B6EN IGBT Transistor

The MMG100S170B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100S170B6EN transistor as follows.

MMG100S170B6EN Transistor Specification

Transistor Code		MMG100S170B6EN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	620W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		40

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