MMG100S170B6EN IGBT Transistor

The MMG100S170B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100S170B6EN transistor as follows.

MMG100S170B6EN Transistor Specification

Transistor Code		MMG100S170B6EN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	620W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		40

UXPython is not the creator or an official representative of the MMG100S170B6EN IGBT transistor. You can download the official MMG100S170B6EN IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXXK110N65B4H1 IGBT Transistor IXGX64N60B3D1 IGBT Transistor IXGD60N60 IGBT Transistor STGW40V60F IGBT Transistor APT200GN60JDQ4 IGBT Transistor F3L300R07PE4 IGBT Transistor APT54GA60B IGBT Transistor MM60G60B IGBT Transistor SKM75GB176D IGBT Transistor VS-GB300TH120U IGBT Transistor TA49121 IGBT Transistor IXGA20N120 IGBT Transistor SGW30N60 IGBT Transistor IXGH12N60BD1 IGBT Transistor NGB8202N IGBT Transistor APTGT30DA170D1 IGBT Transistor APTLGF70U120T IGBT Transistor IXXH30N65B4 IGBT Transistor IKW20N60H3 IGBT Transistor APT50GT120B2RDQ2G IGBT Transistor