MMG100S060B6N IGBT Transistor

The MMG100S060B6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100S060B6N transistor as follows.

MMG100S060B6N Transistor Specification

Transistor Code		MMG100S060B6N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		500
Rise Time		28

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