MMG100HB120H6HN IGBT Transistor

The MMG100HB120H6HN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100HB120H6HN transistor as follows.

MMG100HB120H6HN Transistor Specification

Transistor Code		MMG100HB120H6HN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	550W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		70

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