MMG05N60D IGBT Transistor

The MMG05N60D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG05N60D transistor as follows.

MMG05N60D Transistor Specification

Transistor Code		MMG05N60D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT223
Collector Power Dissipation (Maximum)	Pc	1W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	300A
Operating Junction Temperature (Maximum)		150 oC

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