MM60G60B IGBT Transistor

The MM60G60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MM60G60B transistor as follows.

MM60G60B Transistor Specification

Transistor Code		MM60G60B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	290W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.75V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		35

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