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MM60G60B IGBT Transistor

The MM60G60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MM60G60B transistor as follows.

Circuit diagram symbol of the MM60G60B transistor

MM60G60B Transistor Specification

Transistor Code MM60G60B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 290W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.75V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 35

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