MM40G120L IGBT Transistor

The MM40G120L is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MM40G120L transistor as follows.

MM40G120L Transistor Specification

Transistor Code		MM40G120L
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	410W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.65V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		60

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